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CI5X Series Impact Crushers

CI5X series impact crusher is a new generation of coarse and medium crushed products designed to meet customers needs for high profit, low cost, energy saving and consumption reduction. It is the guarantee for large-volume production line c

Mining, metallurgy, construction, chemical, cement, refractory material, etc.

Parameter


Model Specifications (mm) Feed opening (mm) Max. feed size (mm) Capacity (t/h) Power (kW) Weight (t) Dimensions (mm)
CI5X1315 Φ1300×1500 1540×930 600 250-350 250 20 2880×2755×2560
CI5X1520 Φ1500×2000 2040×520 (2040×995) 350(700) 400-600 2×250 (2×200) 30 3390×3520×2790
CI5X1415 Φ1400×1500 1540×1320 900 350-550 250 24 2995×2790×3090
CI5X1620 Φ1600×2000 2040×1630 1100 500-900 2×200 42 3485×3605×3720
CI5X2023 Φ2000×2300 2400×1920 1300 1200-2000 2×500 76 4890×4380×4765
  • Silicon-germanium
  • Silicon
  • Silicon Germanium (SiGe) technology
  • Silicon-Germanium: Properties, Growth and

    Cited by: 1
  • Silicon Germanium (SiGe)
  • Silicon–Germanium (SiGe) Nanostructures

    Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.

  • Difference Between Silicon and Germanium ...

    作者: Madhu
  • Basic Parameters of Silicon Germanium (SiGe)

    2004-9-21  "The group IV silicon-germanium random alloys differ in several respects from other material combinations treated in this volume. One of the most characteristic features of this material combination concerns bulk Si 1-x Ge x: Si and Ge are miscible over the complete range of compositions.However, the large splitting of the solidus/liquidus phase boundary makes it almost impossible to pull bulk ...

  • NSM Archive
  • MACOM Silicon Germanium (SiGe)

    MACOM has led the way in applying silicon germanium (SiGe) BiCMOS technology for commercial and military applications to ensure system power savings, easier bias and control circuitry, lower overall component cost, increased frequency and oscillating capabilities and integration benefits.

  • Silicon–Germanium (SiGe) Nanostructures

    Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.

  • Silicon-Germ 22.Silicon-Germanium
  • Why silicon and germanium are semiconductors

    Silicon and germanium can also be formed into an alloy of silicon-germanium with a molecular formula of the form Si 1−x Ge x. Silicon-germanium serves as a semiconductor in integrated circuits for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors.

  • MACOM Silicon Germanium (SiGe)

    MACOM has led the way in applying silicon germanium (SiGe) BiCMOS technology for commercial and military applications to ensure system power savings, easier bias and control circuitry, lower overall component cost, increased frequency and oscillating capabilities and integration benefits.

  • Difference Between Silicon and Germanium ...

    2019-10-6  Silicon is a chemical element with atomic number 14 and chemical symbol Si while germanium is a chemical element with atomic number 32 and chemical symbol is Ge. The key difference between silicon and germanium is that Germanium has d electrons, but Silicon does not have any d

  • silicon and germanium
  • Germanium
  • Price Of Silicon Germanium, Wholesale Suppliers
  • Silicon and Germanium
  • Silicon-Germanium (SiGe) Alloy
  • Refractive index of Si (Silicon)
  • Silicon Germanium
  • Electronic band structures of silicon–germanium (SiGe ...

    Si and Ge are both group IV elemental semiconductors and form the diamond crystal structure with a face-centered cubic arrangement of the atoms (see Fig. 1.1 of Chapter 1).The lattice constant of Ge is a Ge = 0.5658 nm, and is larger by 4.2% than the Si lattice constant, a Si = 0.5431 nm. There is a trend that semiconductors with a larger lattice constant are more likely to have a smaller bandgap.

  • Refractive index of Si-Ge (Silicon-germanium, SiGe ...

    Optical functions of silicon-germanium alloys determined using spectroscopic ellipsometry, Opt. Mat. 2, 105-117 (1993) Data [ CSV

  • The study on two-dimensional analytical model for gate

    2010-9-13  precisely analyse the gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs, the exact two-dimensional expression comprising channel poten-tial, channel electric field, threshold voltage, and sub-threshold swing is needed, especially for the ...

  • Silicon-Germanium (SiGe) IC Devices and Technology

    The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This course will provide a comprehensive review of the state-of-the-art in SiGe HBTs and assess its potential for current and future wireless and wireline applications. SiGe HBT technology combines transistor performance competitive with III-V ...

  • Silicon Germanium Wafers High Quality Less Price Fast ...

    From us, you can easily purchase Silicon Germanium Wafers at great prices. Place online order and we will dispatch your order through DHL, FedEx, UPS. You can also request for a quote by mailing us at [email protected] We invite you to contact us for further information about

  • Silicon Germanium, SiGe – RELL Power Microwave

    2019-9-27  Silicon Germanium’s reliability, speed and low cost enabled rapid growth in wireless networks, reducing the size and power needs of WiFi, GPS, cellular phones, and more. Today’s SiGe highly-integrated core chip solutions offer the same advantages to radar and Communication Active Electronically Steerable Antenna (AESA) applications.

  • MID-infrared photonics in silicon and germanium_百度文库

    2013-7-26  S ilicon photonics, known more accurately as group iv photonics, describes optoelectronics devices made from silicon (Si) and germanium (Ge). In recent years, the wavelength range over which silicon photonics can operate has been extended to the mid- and

  • Improved fracture strength of multicrystalline silicon by ...

    2011-9-22  In this work, we have investigated the effect of germanium doping on the fracture strength of multicrystalline silicon (mc-Si) wafers. By comparing to conventional mc-Si, the impact of germanium doping on the breakage of wafers during multi-wire sawing is

  • MID-infrared photonics in silicon and germanium_百度文库

    2013-7-26  S ilicon photonics, known more accurately as group iv photonics, describes optoelectronics devices made from silicon (Si) and germanium (Ge). In recent years, the wavelength range over which silicon photonics can operate has been extended to the mid- and

  • Improved fracture strength of multicrystalline silicon by ...

    2011-9-22  In this work, we have investigated the effect of germanium doping on the fracture strength of multicrystalline silicon (mc-Si) wafers. By comparing to conventional mc-Si, the impact of germanium doping on the breakage of wafers during multi-wire sawing is

  • Germanium epitaxy on silicon
  • Silicon-Germanium (SiGe) Nanostructures
  • semiconductors
  • Non-Silicon microelectronics: Germanium and Germanium

    The background and motivation of the non-silicon microelectronics, in which the non-silicon channel materials are used to realize the CMOS integrated circuits, are introduced in this paper. As the typical non-silicon microeletronic devices, Germanium (Ge) and ...

  • Silicon Germanium Crystal Structure PhysicsOpenLab

    Diamond Cubic Crystal Structure. Silicon and Germanium are examples of covalent crystals. In these solids the atoms are linked to each other by covalent bonds rather than by electrostatic forces or by delocalized valence electrons that work in metals almost like a “glue”. The most classic example of covalent crystal is the diamond that belongs to the fcc cubic crystal system.

  • Silicon Germanium Stanford Nanofabrication Facility

    2019-9-27  A Quick Guide to Aligned Transfer of 2D Materials in ExFab glovebox-r. Operating manual for glovebox-r and the transfer station located inside the glovebox.

  • Germanium VS Silicon
  • Silicon germanium photo-blocking layers for a-IGZO

    2018-12-3  Here, we suggest the use for silicon-germanium (Si-Ge) films grown plasma-enhanced chemical vapour deposition (PECVD) as photo-blocking layers in the a-IGZO thin film transistors (TFTs).


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