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CI5X Series Impact Crushers

CI5X series impact crusher is a new generation of coarse and medium crushed products designed to meet customers needs for high profit, low cost, energy saving and consumption reduction. It is the guarantee for large-volume production line c

Mining, metallurgy, construction, chemical, cement, refractory material, etc.

Parameter


Model Specifications (mm) Feed opening (mm) Max. feed size (mm) Capacity (t/h) Power (kW) Weight (t) Dimensions (mm)
CI5X1315 Φ1300×1500 1540×930 600 250-350 250 20 2880×2755×2560
CI5X1520 Φ1500×2000 2040×520 (2040×995) 350(700) 400-600 2×250 (2×200) 30 3390×3520×2790
CI5X1415 Φ1400×1500 1540×1320 900 350-550 250 24 2995×2790×3090
CI5X1620 Φ1600×2000 2040×1630 1100 500-900 2×200 42 3485×3605×3720
CI5X2023 Φ2000×2300 2400×1920 1300 1200-2000 2×500 76 4890×4380×4765
  • Gallium arsenide
  • Why Use Gallium Arsenide Solar Cells?
  • Multi-junction solar cell
  • World's most efficient, thin and flexible solar

    Gallium Arsenide (GaAs) The backbone of our entire technology is gallium arsenide (GaAs) which is a III-V semiconductor with a Zinc Blende crystal structure. GaAs solar cells were first developed in the early 1970s and have several unique advantages. GaAs is naturally robust to moisture and UV radiation making it very durable.

  • Indium gallium arsenide
  • Solar cell
  • Power- and Spectral-Dependent Photon-Recycling Effects

    2019-9-3  Power- and Spectral-Dependent Photon-Recycling Effects in a Double-Junction Gallium Arsenide Photodiode He Ding,† Hao Hong,‡ Dali Cheng,§ Zhao Shi,§ Kaihui Liu,‡ and Xing Sheng*,§ †School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China ‡State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, and School of ...

  • AG318 GaAs vs Silicon PIN for Switching rev 2

    Gallium Arsenide has several advantages over Silicon when making fast PIN diodes of similar dimensions. GaAs also has a few major disadvantages which limit the type of devices that can be produced. This paper will dis-cuss these characteristics as they effect the type of GaAs PIN diode that can be built and the usage of GaAs PIN

  • gallium arsenide solar cells cost
  • Gallium Arsenide
  • AG318 GaAs vs Silicon PIN for Switching rev 2

    Gallium Arsenide has several advantages over Silicon when making fast PIN diodes of similar dimensions. GaAs also has a few major disadvantages which limit the type of devices that can be produced. This paper will dis-cuss these characteristics as they effect the type of GaAs PIN diode that can be built and the usage of GaAs PIN

  • Photovoltaic Solar Cells Based On Graphene/Gallium ...

    In this article, a computational study on the photovoltaic performance and electrical characteristics of graphene/gallium arsenide Schottky junction solar cell with structure graphene/SiO2/GaAs/Au ...

  • Gallium arsenide solar cells grown at rates exceeding

    Gallium arsenide holds record efficiency for single junction solar cells, but high production costs limit applications. Here Metaferia et al. show high quality GaAs and GaInP at rates exceeding ...

  • Photovoltaic solar cells based on graphene/gallium ...

    In this article, a computational study on the photovoltaic performance and electrical characteristics of graphene/gallium arsenide Schottky junction solar cell with structure graphene/SiO 2 /GaAs/Au is undertaken. Graphene is used as a transparent current conducting electrode.

  • Solar cell guide, part 3 – multi junction, gallium ...

    Gallium Arsenide (GaAs) solar cells. Gallium arsenide (GaAs) is a mixture of two elements, gallium (Ga) and arsenic (As). Gallium is a by-product of the smelting of aluminum and zinc, and is extremely rare. A rare element is certainly not an advantage if we want to bring the energy production of

  • Electrical properties of Gallium Arsenide (GaAs)

    2001-7-23  Impact Ionization. There are two schools of thought regarding the impact ionization in GaAs. The first one states that impact ionization rates α i and β i for electrons and holes in GaAs are known accurately enough to distinguish such subtle details such as the anisothropy of α i and β i for different crystallographic directions. This approach is described in detail in the work by Dmitriev ...

  • Grading gallium indium nitride arsenide for multi

    2015-7-2  Grading gallium indium nitride arsenide for multi-junction solar cells. Researchers based in Germany and the UK have been developing growth processes of gallium indium nitride arsenide (GaInNAs) with graded composition for use in multi-junction solar cells [F. Langer et al, Appl. Phys. Lett., vol106, p233902, 2015].

  • Gallium arsenide GaAs
  • GaAs Wafer Gallium Arsenide vs Silicon
  • Silicon Aluminum Gallium Arsenide Photodiodes
  • Silicon Aluminum Gallium Arsenide Photodiodes
  • GaAs Wafer Gallium Arsenide vs Silicon
  • Galliumarsenide
  • Multijunction III-V Photovoltaics Research

    Early research into multijunction devices leveraged the properties of semiconductors comprised from elements in the III and V columns of the Periodic table, such as gallium indium phosphate (GaInP), gallium indium arsenide (GaInAs), and gallium arsenide (GaAs). Three-junction devices using III-V semiconductors have reached efficiencies of ...

  • Gallium Arsenide Schottky Rectifier I
  • Graphene/gallium arsenide-based Schottky junction

    2019-3-18  For bilayer graphene, the Schottky junction shows photovoltaic effects with the open-circuit voltage of 0.65 V and the short-circuit current density of 10.03 mA/cm 2, yielding a power conversion efficiency of 1.95%, which are superior to single-layer one.

  • Superconductor-semiconductor-superconductor planar ...

    2015-10-20  Superconductor-semiconductor-superconductor planar junctions of aluminium on DELTA-doped gallium arsenide. I E E E Transactions on Applied Superconductivity, 7(2), 2809-2812.

  • Alta Devices sets new dual-junction solar efficiency ...

    2016-4-27  Alta Devices has announced its latest world record for its gallium arsenide (GaAs) solar PV technology. The company has produced a 31.6% dual-junction cell at one sun, as verified by the U.S ...

  • Gallium Arsenide High Power Thin Films NanoFlex

    Gallium Arsenide. GaAs is the highest performance solar material currently available, boasting conversion efficiencies in excess of 40%, nearly double those of crystalline silicon. This means that it can produce nearly twice as much power in a given surface area.

  • Gallium Arsenide
  • Alta Devices sets new dual-junction solar efficiency ...

    2016-4-27  Alta Devices has announced its latest world record for its gallium arsenide (GaAs) solar PV technology. The company has produced a 31.6% dual-junction cell at one sun, as verified by the U.S ...

  • Gallium Arsenide
  • PN Junction Property Calculator BYU Cleanroom

    Gallium Arsenide Germanium: ... These can't really be made, but they are frequently found in students' homework. A subset of the abrupt junction is the one-sided abrupt junction, which can also be calculated here. If you don't know the doping on the heavily-doped side of a one-sided junction, just enter something very large like 1e20. ...

  • Anisotropic etching behaviour of gallium arsenide ...

    A detailed study of the etching behaviour of junctions between gallium arsenide epitaxial layers and substrates of different carrier concentrations and carrier types has been made. Optical and...

  • Gallium Arsenide Schottky Rectifier I V CJunction
  • Gallium Arsenide High Power Thin Films NanoFlex

    Gallium Arsenide. GaAs is the highest performance solar material currently available, boasting conversion efficiencies in excess of 40%, nearly double those of crystalline silicon. This means that it can produce nearly twice as much power in a given surface area.

  • Challenge of Applying Ohmic Contacts to Gallium

    2013-3-4  Ohmic Contacts to Gallium Arsenide This introduces the problem of making ohmic electrical contacts to gallium arsenide (GaAs) devices. Formation of ohmic contacts to compound semiconductors is considerably more difficult than with silicon or germanium due to the reactivity of their constituents and inter-diffusion with the metal.

  • US4385198A
  • Gallium arsenide
  • Band structure and carrier concentration of Gallium ...

    2009-2-24  Temperature Dependences Temperature dependence of the energy gap. E g =1.519-5.40510-4 T 2 /(T+204) (eV) where T is temperatures in degrees K (0 < T < 10 3).. Temperature dependence of the energy difference between the top of the valence band and the bottom of the L-valley of the conduction band


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